| PART |
Description |
Maker |
| GBPC35005W |
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes)
35A GLASS PASSIVATED BRIDGE RECTIFIER
|
Pan Jit International Inc.
Diodes Incorporated
|
| 3414.0114.11 3414.0124.22 |
SUPER FAST BLOW ELECTRIC FUSE, 0.75A, 32VDC, 35A (IR), SURFACE MOUNT
FUSE, SMD, USF0402, 5A; Current, fuse rating:5A; Case style:0402; Approval Bodies:CCC; Approval category:UL Recognised; Current, breaking capacity DC:35A; Depth, external:0.4mm; Device marking:T; Flammability rating:UL94V-1; Fuse RoHS Compliant: Yes
|
SCHURTER INC
|
| 12CGQ150 |
35A 150V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35A, 150V
|
IRF[International Rectifier]
|
| 12CLQ150 |
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35A, 151V
|
International Rectifier
|
| FGW35N60H |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
| STB3NA80 4229 STB3NA80T4 |
Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MG50Q2YS40 E002356 |
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
WIRE, ETFE, TEFZEL, 12AWG, BLACK, 100M; Area, conductor CSA:3.022mm2; Conductor make-up:37/0.320; Voltage rating, AC:600V; Current rating:35A; Colour, primary insulation:Black; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2010.0013 |
Miniature Telecom fuse available in 10 piece blisterTape; Voltage Rating: 250V; Current Rating: 0.4A; Characteristic: TIME LAG BLOW ELECTRIC FUSE, 0.4A, 250VAC, 35A (IR), INLINE/HOLDER
|
SCHURTER AG
|
| BCP68-10 BCP68-16 Q62702-C2126 Q62702-C2128 Q62702 |
From old datasheet system
NPN Silicon AF Transistor (For general AF application High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BDP947 BDP949 Q62702-D1337 Q62702-D1335 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SR104-T SR104-B |
HIGH CURRENT SCHOTTKY BARRIER RECTIFIER
High Current Capability and Low Forward Drop
|
Diodes Incorporated
|
